SOL-GEL PROCESSING OF FERROELECTRIC PBTIO3 AND PB(ZR0.5TI0.5)O-3 THIN-FILMS

Ferroelectric thin films of PbTiO3 and Pb(Zr0.5Ti0.5)O-3 were deposite d using a sol-gel process from a highly stable precursor solution deri ved from a unique and simple system consisting of basic lead acetate; titanium and zirconium butoxides. This new system simplifies the chemi cal processing of precursor solutions of lead titanate-based materials . By adjusting the concentration of the precursor solution and using t he dip-coating technique, homogeneous thin films of PbTiO3 and Pb(Zr0. 5Ti0.5)O-3 were deposited onto glass, conducting glass and single crys tal MgO(100) and SrTiO3(100) substrates. The thin-films were character ized by X-ray diffraction (XRD) and transmission electron microscopy ( TEM). P-E hysteresis of these films revealed their ferroelectric natur e. The effect of indium-tin-oxide (ITO) bottom electrode on the micros tructure of PZT thin films in the PZT/ITO/glass substrate structure is also reported.