SUPER-FLAT INTERFACES IN PSEUDOMORPHIC INXGA1-XAS AL0.28GA0.72AS QUANTUM-WELLS WITH HIGH IN CONTENT (X = 0.15) GROWN ON (411)A GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY/

Pseudomorphic InxGa1-xAs/Al0.28Ga0.72As (x = 0.085-0.15) quantum wells (QWs) with well widths of 1.2, 2.4, 3.6, 4.8, 7.2 and 12 nm have been grown on (411)A and (100) GaAs substrates at a temperature (T-s) of 5 20 degrees C by molecular beam epitaxy (MBE). The interface flatness o f the QWs was characterized by photoluminescence (PL) at 4.2 K. PL lin ewidths of the narrow (411)A QWs (L-w = 2.4 nm) with x = 0.085 and 0.1 5 were 7.3 meV which is approximately 30-40% smaller than those of the (100) QWs, indicating that extremely flat interfaces over a macroscop ic area [(411)A super-flat interfaces] have been realized in the pseud omorphic InxGa1-xAs/Al0.28Ga0.72As QWs (up to x = 0.15) grown on the ( 411)A GaAs substrates, similar to lattice-matched GaAs/AlxGa1-xAs QWs grown on (411)A GaAs substrate previously reported.