CHARACTERISTICS OF ALPHA-RADIATION-INDUCED DEEP-LEVEL DEFECTS IN P-TYPE INP GROWN BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION

Room temperature storage and/or minority carrier injection behaviors o f three prominent majority carrier levels H3 (E-v+0.34 eV), H4 (E-v+0. 39 eV) and H5 (E-v+0.58 eV) and three minority carrier levels, 0.22, 0 .29 and 0.35 eV below the conduction band edge in metal-organic chemic al vapor deposition (MOCVD) grown p-type InP crystals produced by alph a radiation have been studied using deep levels transient spectroscopy . In particular, H5, absent immediately after irradiation, is found to grow with storage at room temperature after irradiation with no chang e in the other two majority carrier levels. Minority carrier injection saturates H5 while H3 and H4 continue to decay after injection. These observations are interpreted to mean that H4 and H5 are unrelated lev els with no or very little mutual conversion proposed in some previous irradiation studies. Detailed production rate data for H3, H4 and H5 (post-injection) over a range of alpha-particle doses have also been p rovided for the first time.