SIMPLE APPROACH TO SELF-ENERGY CORRECTIONS IN SEMICONDUCTORS AND INSULATORS

We have used the Sterne-Inkson [P. A. Sterne and J. C. Inkson, J. Phys . C 17, 1497 (1984)] extreme tight-binding model for the self-energy c orrections to the top of the valence band and bottom of the conduction band within the GW approximation. Application of these corrections to both exchange-only local-density-approximation (LDA) calculations and the LDA with Ceperley-Alder correlation calculations for five materia ls C, Si, Ge, GaAs, and ZnSe has been found to result in good agreemen t with experimental data and recent theoretical results. The LDA calcu lations were performed by using the plane-wave-basis and norm-conservi ng pseudopotentials.