EXPERIMENTAL-DETERMINATION OF THE GAAS AND GA1-XALXAS BAND-GAP ENERGY-DEPENDENCE ON TEMPERATURE AND ALUMINUM MOLE FRACTION IN THE DIRECT-BAND-GAP REGION

Authors
ELALLALI M SORENSEN CB VEJE E TIDEMANDPETERSSON P
Citation
M. Elallali et al., EXPERIMENTAL-DETERMINATION OF THE GAAS AND GA1-XALXAS BAND-GAP ENERGY-DEPENDENCE ON TEMPERATURE AND ALUMINUM MOLE FRACTION IN THE DIRECT-BAND-GAP REGION, Physical review. B, Condensed matter, 48(7), 1993, pp. 4398-4404
Citations number
41
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
48
Issue
7
Year of publication
1993
Pages
4398 - 4404
Database
ISI
SICI code
0163-1829(1993)48:7<4398:EOTGAG>2.0.ZU;2-W
Abstract
The band-gap energy of GaAs and Ga1-xAlxAs has been measured with the use of photoluminescence from 10 to 300 K, and at various values of th e aluminum mole fraction x, in the direct band-gap region. The tempera ture dependence has been fitted with the Varshni relation, and a discu ssion of this fitting is given. The results for GaAs are discussed in relation to previous experimental and theoretical data and good agreem ent is found in some, but not all cases. The observed variation of the band-gap energy of Ga1-xAlxAs with x is presented and compared to pre vious results.