NONEXPONENTIAL GENERATION-RECOMBINATION DYNAMICS IN DOPED SEMICONDUCTORS AS A POSSIBLE SOURCE OF HIGH-FREQUENCY-1 F NOISE/

We present a theoretical study of generation-recombination processes f rom shallow impurities which includes self-consistently the contributi on of the impurity excited levels. Making use of an original Monte Car lo simulation which accounts for both the kinetic energy of the carrie r and its potential energy near the impurity, we have solved the semic lassical Boltzmann equation to investigate the dynamics of generation- recombination processes on a kinetic level. Calculations performed for the case of p-type Si clearly evidence a nonexponential distribution of the microscopic times spent by the carriers in the impurity centers and in the conducting band. This in turn leads to the impossibility o f a rigorous definition of a carrier lifetime and therefore to a possi ble source of high-frequency 1/f noise. The theory is found to compare favorably with available experiments.