REDUCTION OF POINT-DEFECTS AND FORMATION OF ABRUPT HETEROINTERFACES IN LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY OF GAAS AND GAP UNDER ATOMIC-HYDROGEN IRRADIATION

The removal effect of excess As and P atoms adsorbed on GaAs (100) and GaP (100) surfaces by atomic hydrogen (H) irradiation was investigate d by reflection high-energy electron diffraction and X-ray photoelectr on spectroscopy It was found that the excess As and P atoms were effec tively removed by atomic H irradiation at a low temperature of 350 deg rees C. Then, we attempted to obtain a high-quality GaAs epitaxial lay er and an ordered (GaAs)(1)(GaP)(3) strained short-period superlattice (SSPS) with abrupt GaAs/GaP hetero-interfaces in the low-temperature growth under atomic H irradiation. The quality of the GaAs epitaxial l ayer and the abruptness of the GaAs/GaP hetero-interfaces in the (GaAs )(1)(GaP)(3) SSPS were evaluated by photoluminescence, deep-level tran sient spectroscopy and transmission electron microscopy. As a result, it was clarified that the density of point defects in the GaAs epitaxi al layer was reduced and an abrupt GaAs/GaP hetero-interface of the (G aAs)(1)(GaP)(3) SSPS was formed in the low-temperature growth under at omic H irradiation.