MICROSTRUCTURAL PROPERTIES OF ZRSI2 ON SI(100)

The microstructural properties of zirconium silicide on Si(100) substr ates were investigated. The Zr thin films were deposited on Si(100) su bstrates by using the electron-beam evaporation system, followed by th ermal annealing at temperatures between 500 degrees C and 800 degrees C, with 100 degrees C increments. The formation of C49 ZrSi2 was obser ved at the Zr/Si interface after annealing at 600 degrees C. The sheet resistivities were found to be affected by the formation of C49 ZrSi2 . The zirconium silicide thin film annealed at 600 degrees C showed a significant drop in resistivity values from 184.3 mu Omega.cm to 74.3 mu Omega.cm, which was due to the formation of C49 ZrSi2 at the Zr/Si interface. The resistivity values of ZrSi2 were determined to be 32 mu Omega.cm after annealing at 800 degrees C. The chemical analysis of C 49 ZrSi2 was done with AES and exhibited a good stoichiometry of ZrSi2 . The interface morphologies of zirconium silicide were examined by tr ansmission electron microscopy (TEM) and high-resolution TEM (HRTEM). The formation of C49 ZrSi2 was observed at the Zr/Si interface after a nnealing at 600 degrees C, The surface and interface morphologies of t he ZrSi2 film annealed at 800 degrees C showed relatively uniform morp hologies,which indicated that C49 ZrSi2 thin films had a high resistan ce to agglomeration and high thermal stability.