RAMAN AND X-RAY STUDIES OF INN FILMS GROWN AT DIFFERENT TEMPERATURES BY METALORGANIC VAPOR-PHASE EPITAXY

We used Raman scattering and X-ray diffraction (XRD) methods to invest igate the properties of InN films deposited at temperatures ranging fr om 325 to 600 degrees C by metalorganic vapor phase epitaxy (MOVPE). S ignificant line broadening, softening and intensity evolution were obs erved from films at growth temperatures between 375 and 450 degrees C. This can be attributed to the formation of mixed hexagonal and cubic structures and related dislocation defects. As the growth temperature was further increased, the hexagonal phase tvas found to be dominant i n the deposited InN film.