PREPARATION AND ELECTRICAL-PROPERTIES OF SOL-GEL DERIVED ZR-RICH PB(ZR,TI)O-3 THIN-FILMS

Zr-rich lead zirconate titanate (PZT) thin films with a thickness of 0 .4-1 mu m were successfully prepared on (111)Pt/Ti/SiO2/Si and (111)Pb (La, Ti)O-3/Pt/Ti/SiO2/Si substrates by the sol-gel processing method using metal alkoxides. The crystal structures of the films were sensit ive to the temperature of rapid thermal annealing. The pyroelectric cu rrent, dielectric constant, remanent polarization and coercive field o f the PZT films were measured. The pyroelectric coefficients of Zr/Ti = 97/3, 95/5 and 93/7 as-prepared films showed a peak at 38, 66 and 82 degrees C, respectively, which corresponded to the phase transition f rom a low-temperature rhombohedral ferroelectric phase F-R(LT) to a hi gh-temperature rhombohedral ferroelectric phase F-R(HT) .