FE3SI PHASE-FORMATION AT FE SI(111)-7X7 INTERFACE AT ROOM-TEMPERATURESTUDIED BY SEMIEMPIRICAL THEORY/

The reaction at the Fe/Si interface and the growth mode of Fe on Si(11 1)-7 x 7 substrate at room temperature were investigated. The Si-2p co re level photoemission spectra as a function of deposited Fe thickness were measured, and were analyzed by the modified Butera's model based on the semiempirical theory. Islands of Fe3Si phase were formed in th e unreacted Fe matrix on Fe thickness of about 1 Angstrom to 10 Angstr om and silicide growth was restricted to the Fe thickness. Bulk Fe was grown by further Fe-deposition.