METALORGANIC MOLECULAR-BEAM EPITAXY OF CUINSE2 ON GAAS SUBSTRATE

The metalorganic molecular beam epitaxial growth of CuInSe2 layers on a GaAs(100) substrate was performed at (550 degrees C using cyclopenta dienylcoppertriethylphosphine (CpCuTEP), triethylindium and selenium a s source precursors. CuInSe2 layers with a flat surface were successfu lly grown. The epilayers were examined by X-ray diffraction, photolumi nescence (PL) and photoreflectance measurements. The CuInSe2 layer gro wn under optimum conditions exhibited an exciton emission in the PL sp ectrum.