EPITAXIAL-GROWTH OF ZNSE ON SI(111) WITH LATTICE-MATCHED LAYERED INSEBUFFER LAYERS

The growth of thick ZnSe films with high crystalline quality on a Si s ubstrate is impaired by the 4.4% lattice mismatch at the interface. Ba sed on the concept of van der Waals epitaxy, an InSe buffer layer was inserted between ZnSe and Si. The three-monolayer-thick buffer layer w as grown by molecular beam epitaxy on a hydrogen-terminated Si(111) su bstrate. Despite a lattice mismatch of 4.2%, the InSe film grew with h igh crystalline quality and without lattice distortions. ZnSe was subs equently grown on the InSe layer. The lattice mismatch of 0.2% at this interface appeared to be favorable for the growth of high-quality ZnS e films. In situ reflection high-energy electron diffraction and ex si tu atomic force microscopy studies in the thin-film growth regime are presented.