THE EFFECT OF ACCELERATION VOLTAGES ON THE PREPARATION OF CUINSE2 THIN-FILMS BY IONIZED CLUSTER BEAM TECHNIQUE

Polycrystalline CuInSe2 thin films were prepared on Mo-coated soda-lim e glass substrates by the ionized cluster beam (ICB) technique, in whi ch Cu, In and Se vapors were ionized and accelerated. The dependence o f the film properties on acceleration voltage were studied. The substr ate temperature was maintained below 350 degrees C. The films were cha racterized using X-ray diffraction (XRD), scanning electron microscope (SEM), an electron-probe microanalyzer (EPMA) and the Rutherford back scattering spectrometry (RBS). It was found that polycrystalline films with improved grain size and uniformity were obtained when the accele ration voltage exceeded 4 kV, and the acceleration voltage played an i mportant rule in the formation of the ternary compound during the crys tal growth.