ANNEALING EFFECT ON THE TEMPERATURE-DEPEN DENCE OF THE BREAKDOWN VOLTAGE IN IRRADIATED SILICON P-N-JUNCTIONS

Authors
KORSHUNOV FP LASTOVSKY SB TROSHCHINSKY VT
Citation
Fp. Korshunov et al., ANNEALING EFFECT ON THE TEMPERATURE-DEPEN DENCE OF THE BREAKDOWN VOLTAGE IN IRRADIATED SILICON P-N-JUNCTIONS, Doklady Akademii nauk BSSR, 39(3), 1995, pp. 35-38
Citations number
5
Categorie Soggetti
Multidisciplinary Sciences
Journal title
Doklady Akademii nauk BSSR → ACNP
ISSN journal
0002354X
Volume
39
Issue
3
Year of publication
1995
Pages
35 - 38
Database
ISI
SICI code
0002-354X(1995)39:3<35:AEOTTD>2.0.ZU;2-J
Abstract
The changes of the breakdown voltage and the variations of its tempera ture dependence (78-340 K) after isochronal annealing (100-400 degrees C) in silicon p-n-junctions irradiated with 4 MeV electrons were inve stigated. It was shown that the appearance of the two stages of the br eakdown voltage increasing (negative annealing) were connected with th e annealing of E-center and more shallow radiation defects.