CRITICAL CONDUCTIVITY EXPONENT OF SI-P IN A MAGNETIC-FIELD

Citation
Ph. Dai et al., CRITICAL CONDUCTIVITY EXPONENT OF SI-P IN A MAGNETIC-FIELD, Physical review. B, Condensed matter, 48(7), 1993, pp. 4941-4943
Citations number
33
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
48
Issue
7
Year of publication
1993
Pages
4941 - 4943
Database
ISI
SICI code
0163-1829(1993)48:7<4941:CCEOSI>2.0.ZU;2-G
Abstract
The critical conductivity exponent of Si:P changes from near 1/2 in ze ro field to 0.86 +/- 0.15 in a magnetic field of 8 T, consistent with the theoretical expectation of 1. According to recent theory, similar behavior found earlier in Si:B, where spin-orbit scattering is strong, corresponds to the universality class for magnetic impurities. These measurements in Si:P thus constitute a clear determination of the crit ical conductivity exponent near the metal-insulator transition in the universality class for high magnetic field.