HIGH CAPACITANCE RATIO WITH GAAS INGAAS/ALAS HETEROSTRUCTURE QUANTUM WELL-BARRIER VARACTORS/

Authors
DUEZ V MELIQUE X VANBESIEN O MOUNAIX P MOLLOT F LIPPENS D
Citation
V. Duez et al., HIGH CAPACITANCE RATIO WITH GAAS INGAAS/ALAS HETEROSTRUCTURE QUANTUM WELL-BARRIER VARACTORS/, Electronics Letters, 34(19), 1998, pp. 1860-1861
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
19
Year of publication
1998
Pages
1860 - 1861
Database
ISI
SICI code
0013-5194(1998)34:19<1860:HCRWGI>2.0.ZU;2-#
Abstract
The authors report a very high capacitance ratio of similar to 10:1 fo r a heterostructure varactor. To realise this, a new InGaAs/AlAs quant um well-barrier scheme has been fabricated in GaAs technology. The cap acitance modulation involves carrier dynamics via the quantum well eig enstates in contrast to the conventional depletion operation mode.