V. Duez et al., HIGH CAPACITANCE RATIO WITH GAAS INGAAS/ALAS HETEROSTRUCTURE QUANTUM WELL-BARRIER VARACTORS/, Electronics Letters, 34(19), 1998, pp. 1860-1861
The authors report a very high capacitance ratio of similar to 10:1 fo
r a heterostructure varactor. To realise this, a new InGaAs/AlAs quant
um well-barrier scheme has been fabricated in GaAs technology. The cap
acitance modulation involves carrier dynamics via the quantum well eig
enstates in contrast to the conventional depletion operation mode.