Rapid,thermal processing in steam-containing ambients is a new method
that is strongly aligned with current and anticipated future device ne
eds. There are numerous advantages of steam-based rapid thermal proces
sing technology in conjunction with the fast ambient switching capabil
ity of a single-wafer rapid thermal processing system. Our discussions
will include some of the key issues involved in designing integrated
steam generator/rapid thermal processing systems that can offer the de
sired process control and capability, throughput, and flexibility. The
studies presented here focus on the physical and electrical propertie
s of the oxides grown in the new integrated steam system; correlate th
e oxide growth curves with the model that explains the oxidation behav
ior; and briefly show the overall advantages and key areas of integrat
ed circuit processing where this technique may be used.