CONDITIONS FOR IN-SITU GROWTH OF BISRCACUO THIN-FILMS BY LASER DEPOSITION

Citation
G. Poullain et al., CONDITIONS FOR IN-SITU GROWTH OF BISRCACUO THIN-FILMS BY LASER DEPOSITION, Physica. C, Superconductivity, 214(1-2), 1993, pp. 195-203
Citations number
17
Categorie Soggetti
Physics, Applied
ISSN journal
09214534
Volume
214
Issue
1-2
Year of publication
1993
Pages
195 - 203
Database
ISI
SICI code
0921-4534(1993)214:1-2<195:CFIGOB>2.0.ZU;2-C
Abstract
Superconducting thin films of Bi 2212 have been deposited by laser abl ation. The influence of the density of the target upon the composition of the film is described. The substrate temperature is shown to be ve ry critical: the in-situ deposition of well crystallized films require s an accurate heating system control. The influence of the oxygen pres sure during deposition is especially discussed. Our work indicates tha t the end-of-deposition part of the processing cannot sufficiently imp rove the oxidation of the films. Therefore we present preliminary resu lts on a new way to increase the in-situ oxidation of the films: the p lasma assisted laser deposition method. The best in-situ film shows a critical temperature (R=0) of 83 K.