Linear arrays of CaF2 stripes and dots, about 7 nm wide, are fabricated by
self-assembly on stepped Si(111). Stripes are grown on a CaF1 passivation l
ayer, dots directly on Si. The stripes have a precision of +/-1 nm, are con
tinuous, do not touch each other, and are attached to the top of the step e
dges. The stripe repulsion and their counter-intuitive attachment are expla
ined via a reversal of the stacking at the CaF2/Si(111) interface. The dot
density is 3X10(11) cm(-2)=2 Teradots/in.(2). These arrays may serve as mas
ks in nanolithography. (C) 1999 American Institute of Physics. [S0003-6951(
99)01115-8].