Doppler broadening positron annihilation spectroscopy: A technique for measuring open-volume defects in silsesquioxane spin-on glass films

Doppler broadening positron annihilation spectroscopy is used to measure th e concentration, spatial distribution, and size of open-volume defects in l ow dielectric constant (low-k) hydrogen- and methyl-silsesquioxane thin fil ms. A simple correlation between the number of open-volume defects and the dielectric constant is obtained. In addition, the depth-resolving capabilit y enables profiling of the local electronic environment of open-volume defe cts as a function of depth. The potential for using this technique for meas uring k as a function of film depth is also discussed. (C) 1999 American In stitute of Physics. [S0003-6951(99)02115-4].