Red light emission by photoluminescence and electroluminescence from Pr-doped GaN on Si substrates

Visible light emission has been obtained at room temperature by photolumine scence (PL) and electroluminescence (EL) from Pr-doped GaN thin films grown on Si(111). The GaN was grown by molecular beam epitaxy using solid source s (for Ga and Pr) and a plasma gas source for N-2. Photoexcitation with a H e-Cd laser results in strong red emission at 648 and 650 nm, corresponding to the transition between P-3(0) and F-3(2) states in Pr3+. The full width at half maximum (FWHM) of the PL lines is similar to 1.2 nm, which correspo nds to similar to 3.6 meV. Emission is also measured at near-infrared wavel engths, corresponding to lower energy transitions. Ar laser pumping at 488 nm also resulted in red emission, but with much lower intensity. Indium-tin -oxide Schottky contacts were used to demonstrate visible red EL from the G aN:Pr. The FWHM of the EL emission line is similar to 7 nm. (C) 1999 Americ an Institute of Physics. [S0003-6951(99)00315-0].