Coulomb blockade in silicon nano-pillars

Authors
Pooley, DM Ahmed, H Mizuta, H Nakazato, K
Citation
Dm. Pooley et al., Coulomb blockade in silicon nano-pillars, APPL PHYS L, 74(15), 1999, pp. 2191-2193
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
15
Year of publication
1999
Pages
2191 - 2193
Database
ISI
SICI code
0003-6951(19990412)74:15<2191:CBISN>2.0.ZU;2-G
Abstract
We have investigated the current-voltage characteristics of nano-pillars of polycrystalline silicon with two 2-3 nm thick silicon nitride tunnel barri ers. Pillars with diameters between 45 and 100 nm showed a Coulomb blockade region and Coulomb staircase at 4.2 K. (C) 1999 American Institute of Phys ics. [S0003-6951(99)01515-6].