1.4x efficiency improvement in transparent-substrate (AlxGa1-x)(0.5)In0.5Plight-emitting diodes with thin (<= 2000 angstrom) active regions

Authors
Gardner, NF Chui, HC Chen, EI Krames, MR Huang, JW Kish, FA Stockman, SA Kocot, CP Tan, TS Moll, N
Citation
Nf. Gardner et al., 1.4x efficiency improvement in transparent-substrate (AlxGa1-x)(0.5)In0.5Plight-emitting diodes with thin (<= 2000 angstrom) active regions, APPL PHYS L, 74(15), 1999, pp. 2230-2232
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
15
Year of publication
1999
Pages
2230 - 2232
Database
ISI
SICI code
0003-6951(19990412)74:15<2230:1EIIT(>2.0.ZU;2-P
Abstract
Improvement of 1.4X in the external quantum efficiency and luminous efficie ncy (lm/W) of transparent-substrate (AlxGa1-x)(0.5)In0.5P/GaP light-emittin g diodes is demonstrated. The improvement is accomplished by reducing the t hickness of the active layer to less than or equal to 2000 Angstrom and inc reasing the internal quantum efficiency by using multiple thin (less than o r equal to 500 Angstrom) active layers. The maximum luminous efficiency ach ieved is 73.7 lm/W at lambda(p) similar to 615 nm and the maximum external quantum efficiency is 32.0% at lambda(p) similar to 632 nm. (C) 1999 Americ an Institute of Physics. [S0003-6951(99)03515-9].