Deposition and annealing of ultrathin Ta2O5 films on nitrogen passivated Si(100)

An similar to 8 Angstrom thick prepassivated nitride (Si3N4-xOx) layer prev ents interfacial silicon oxide formation during chemical vapor deposition ( CVD) of similar to 75 Angstrom thick Ta2O5 film at 520 degrees C. However, the CVD process leads to increased oxygen content in the Si3N4-xOx layer. A nnealing the Ta2O5/Si3N4-xOx sample in O-2 at 820 degrees C causes silicon oxide formation within the top layers of Ta2O5 in addition to substrate oxi dation to silicon oxide, and nitrogen depletion from the Si3N4-xOx layer, i n contrast, a sample annealed in a vacuum at 820 degrees C does not show su rface silicon oxide Formation, but the possibilities of tantalum silicide f ormation and oxygen transfer from Ta2O5 to S(i)3N(4-x)O(x) are noted at the Ta2O5/Si3N4-xOx interface. (C) 1998 The Electrochemical Society. S1099-006 2(98)04-046-2-X. All rights reserved.