Epitaxial growth of void-free 3C-SiC on Si with heterointerface modification by SiNx

Silicon carbide films were epitaxially grown on a Si(111) substrate whose s urface was modified by NH3 nitridation to form SiNx and the quality was exa mined. For SiC films grown on a pure Si substrate, voids were formed on the silicon side of the SiC/Si interface, while the nitrided Si substrates acc ommodated the growth of the SiC films with a flat and smooth film/substrate interface without the formation of voids. The void formation was attribute d to the out-diffusion of Si atoms from the Si substrate during the growth process. The grown films were oriented along the (111) plane of 3C-SiC. SiC films grown on the Si substrate nitrided with NH3 showed better crystallin e quality as opposed to those on the pure Si substrate. (C) 1998 The Electr ochemical Society. S1099-0062(98)04-021-8. All rights reserved.