The effect of preoxide quality of furnace-grown N2O oxynitride on charge-to-breakdown and Program/Erase endurance in EEPROM

Authors
Maiti, B Tobin, PJ Hegde, RI Ajuria, SA Chang, KT Paulson, W
Citation
B. Maiti et al., The effect of preoxide quality of furnace-grown N2O oxynitride on charge-to-breakdown and Program/Erase endurance in EEPROM, EL SOLID ST, 1(3), 1998, pp. 147-149
Citations number
9
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
ELECTROCHEMICAL AND SOLID STATE LETTERS
ISSN journal
10990062 → ACNP
Volume
1
Issue
3
Year of publication
1998
Pages
147 - 149
Database
ISI
SICI code
1099-0062(199809)1:3<147:TEOPQO>2.0.ZU;2-1
Abstract
The choice of preoxide growth process has an important effect on the reliab ility of the two-step furnace-grown N2O oxynitride. The impact of improved preoxide quality is most notable for the charge-to-breakdown under substrat e injection and the electrically erasable programmable read-only memory (EE PROM) program/erase endurance. We attribute this observation to the effect of preoxide quality on the nature of nitrogen bonding upon N2O anneal. This paper provides an avenue for further enhancing the reliability of N2O tunn el dielectrics for nonvolatile memory applications. (C) 1998 The Electroche mical Society. S1099-0062(98)03-005-3. All rights reserved.