Enhanced growth rate in atomic layer epitaxy of indium oxide and indium-tin oxide thin films

Growth rates of In2O3 and In2O3:Sn (ITO) films were increased 6y substituti ng water with hydrogen peroxide in the atomic layer epitaxy processes where InCl3 and SnCl4 served as metal precursors. The growth rate of In2O3 incre ased from 0.27 to 0.40 Angstrom/cycle, and that of ITO from 0.20 to 0.32 An gstrom/cycle. By optimizing the pulse and purge times the overall depositio n rate could be increased further, from 0.65 to 2.0 nm/min, for In2O3 grown at 500 degrees C. Film properties, such as high conductivity and transmitt ance, remained the same for the two oxygen precursors. (C) 1998 The Electro chemical Society. S1099-0062(98)04-011-5. All rights reserved.