P-type delta-doped InGaAs/GaAs quantum well vertical-cavity surface-emitting lasers

The vertical-cavity surface-emitting laser (VCSEL) operating with low thres hold current is a promising way to realize future parallel optical intercon nects. In this study, we propose a novel structure of p-type delta-doped In -GaAs/GaAs quantum wells for low-threshold, high-speed VCSELs. Edge-emittin g lasers having p-type delta-doped quantum wells were grown by metal-organi c chemical-vapor deposition and a low-threshold current density of 152 A/cm (2) (51 A/cm(2)/well) was realized. We also fabricated p-type delta-doped q uantum well InGaAs/GaAs VCSELs with a low-resistance GaAs/AlAs distributed Bragg reflector, and achieved a low threshold current of 0.37. Further thre shold reduction by controlling the doping concentration in the p-type delta doped layers is expected. (C) 1999 Scripta Technica.