Room temperature laser operation of bulk InGaAsN/GaAs structures grown by AP-MOVPE using N-2 as carrier gas

Long wavelength bulk InGaAsN semiconductor laser structures have been grown on GaAs substrate by AP-MOVPE, using DMHY and TBAs. After thermal annealin g, GaAs/InGaAsN, and AlGaAs/InGaAsN Fabry-Perot laser diodes were processed from the wafers. At room temperature, stimulated emission was observed at peak wavelength from 1.15 to 1.38 mu m, and laser operation was achieved at 1.16 and 1.275 mu m. Infinite current density is extrapolated to 12kA/cm(2 ) for AlGaAs/InGaAsN bull; laser diodes.