0.1 mu m Ga0.51In0.49P/In0.2Ga0.8As PHEMT grown by GSMBE with high DC and RF performances

0.1 mu m Ga0.51In0.49P/In0.2Ga0.8As/GaAs PHEMTs grown by GSMBE have been re alised. A new interface GaInP/InGaAs has been studied and optimised to give a 2-DEG density of 2 x 10(12) cm(-2) with a mobility of 5500 cm(2)/Vs at 3 00 K. The AuGe/Ni/ Au Ohmic contact has been also optimised (R-c = 0.08 Ohm .mm) and a new nonselective wet chemical etching technique based on iodic a cid (HIO3) has been developed. This device with single delta-doping exhibit s state of the art DC and RF performances in this new system with a current density of 780 mA/mm, a breakdown voltage of 9V, a G(m) of 700mS/mm and an F-t of 120 GHz.