Fabrication of high-mobility Ge p-channel MOSFETs on Si substrates

Authors
Reinking, D Kammler, R Hoffmann, N Horn-von Hoegen, M Hofmann, KR
Citation
D. Reinking et al., Fabrication of high-mobility Ge p-channel MOSFETs on Si substrates, ELECTR LETT, 35(6), 1999, pp. 503-504
Citations number
5
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
6
Year of publication
1999
Pages
503 - 504
Database
ISI
SICI code
0013-5194(19990318)35:6<503:FOHGPM>2.0.ZU;2-9
Abstract
The first fabrication of Ge p-channel MOSFETs (p-MOSFETs) on Si substrates is reported. A CMOS compatible process based on relaxed Ge layers grown on Si(111) substrates by surfactant-mediated epitaxy (SME) was used. The non-o ptimised low temperature process yielded normally-off Ge p-MOSFETs with rec ord channel drift mobilities of 430 cm(2/)Vs.