Sulphur passivation of dry-etched AlGaAs laser facets

Authors
Collot, P Delalande, S Olivier, J
Citation
P. Collot et al., Sulphur passivation of dry-etched AlGaAs laser facets, ELECTR LETT, 35(6), 1999, pp. 506-508
Citations number
9
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
6
Year of publication
1999
Pages
506 - 508
Database
ISI
SICI code
0013-5194(19990318)35:6<506:SPODAL>2.0.ZU;2-A
Abstract
The effects ars reported of sulphur treatment in Na2S and (NH4)(2)S solutio ns for the passivation of AlGaAs laser facets, etched using Cl-2-based chem ically-assisted-ion-beam-etching. Compared to untreated lasers, a 37% avera ge improvement in the catastrophic optical mirror damage threshold is measu red on sulphur-treated broad-area CAIBE lasers.