Suppression of reverse-short-channel effect in sub -0.1 mu m n-MOSFETs with Sb S/D implantation

Authors
Tsuno, M Tanaka, M Koh, M Iwamoto, K Murakami, H Shibahara, K Mattausch, MM
Citation
M. Tsuno et al., Suppression of reverse-short-channel effect in sub -0.1 mu m n-MOSFETs with Sb S/D implantation, ELECTR LETT, 35(6), 1999, pp. 508-509
Citations number
9
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
6
Year of publication
1999
Pages
508 - 509
Database
ISI
SICI code
0013-5194(19990318)35:6<508:SOREIS>2.0.ZU;2-D
Abstract
A study is presented into the reverse-short-channel effect (RSCE) for Sb S/ D ion implantation at 10 keV. A high impurity concentration is found to red uce interstitial movement in the channel, which restricts the level RSCE at short-channel lengths. The interstitials can be healed by thermal treatmen t at 850 degrees C directly after ion implantation, resulting in the suppre ssion of the RSCE.