Travelling-wave type LiNbO3 (LN) optical modulator structures employing thi
cker coplanar waveguide (CPW) electrodes are presented, for achieving a low
er driving-voltage and broader bandwidth characteristic with an impedance a
nd velocity match condition. To design a high-performance device-structure,
a figure of merit p is introduced for travelling-wave type optical modulat
ors, which can make an excellent modulator with a smaller value of p. Micro
wave characteristics of the modulators with a ridged type LN-substrate are
theoretically compared to those of planar-type modulators. As a result, the
characteristic-impedance and the product of driving-voltage and interactio
n-length of the electrodes in modulators are shown to be almost determined
only by the buffer-layer thickness for any modulator-structure under a velo
city-matching condition. By utilising a wider gap and accordingly thicker e
lectrodes with a ridged LN-substrate, LN modulator structures having a 40 G
Hz-band and far less than a 3V driving-voltage have been clarified under a
50 Omega characteristic-impedance system.