Charge pumping techniques - Their use for diagnosis and interface states studies in MOS transistors

Authors
Autran, JL Balland, B Barbottin, G
Citation
Jl. Autran et al., Charge pumping techniques - Their use for diagnosis and interface states studies in MOS transistors, INSTABILITIES IN SILICON DEVICES, VOL 3, 1999, pp. 405-493
Categorie Soggetti
Current Book Contents
Journal title
INSTABILITIES IN SILICON DEVICES, VOL 3 → ACNP
Year of publication
1999
Pages
405 - 493
Database
ISI
SICI code