Defects and radiation-induced charge-trapping phenomena in SiO2

Authors
Paillet, P Leray, JL
Citation
P. Paillet et Jl. Leray, Defects and radiation-induced charge-trapping phenomena in SiO2, INSTABILITIES IN SILICON DEVICES, VOL 3, 1999, pp. 723-780
Categorie Soggetti
Current Book Contents
Journal title
INSTABILITIES IN SILICON DEVICES, VOL 3 → ACNP
Year of publication
1999
Pages
723 - 780
Database
ISI
SICI code