Electrical and optical properties of silicon, doped by erbium during sublimational molecular beam epitaxy

Andreev, AY Andreev, BA Drozdov, MN Ellmer, H Kuznetsov, VP Kalugin, NG Krasilnic, ZF Karpov, YA Palmetshofer, L Piplits, K Rubtsova, RA Stepikhova, MV Uskova, EA Shmagin, VB Hutter, H

Ay. Andreev et al., Electrical and optical properties of silicon, doped by erbium during sublimational molecular beam epitaxy, IAN FIZ, 63(2), 1999, pp. 392-399

21

Physics

IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA

03676765 → ACNP

63

2

1999

392 - 399

ISI

0367-6765(199902)63:2<392:EAOPOS>2.0.ZU;2-C