Influence of sapphire nitridation on properties of indium nitride preparedby metalorganic vapor phase epitaxy

Indium nitride films have been successfully grown on (0001) sapphire substr ates by metalorganic vapor phase epitaxy (MOVPE) using TMIn and NH3 as sour ce precursors. Experimental results indicated that pregrowth treatments, su ch as buffer layer growth, nitridation temperature and nitridation duration have dramatic effects on the growth of the InN films. For films nitridated at 1,000 degrees C for 40 min without any buffer layer growth, we obtained an InN film quality with Hall mobility, carrier concentration and line wid th of Raman E-2 mode of 270 cm(2)/V.s, 5 x 10(19) cm(-3) and 4.5 cm(-1), re spectively, which is among the best quality ever reported for such type of film grown by MOVPE.