The relation between the composition (y) and the growth condition is examin
ed for hot wall epitaxy (HWE) of (100) Cd1-yZnyTe (CZT) using a CZT (y = 0.
2) source and Cd reservoir. A good linear relation between the compositions
and their partial pressure ratio is obtained. The composition can be effec
tively controlled by varying both the source composition and vapor pressure
of the Cd reservoir.