Evaluation of interface states in ZnO varistors by spectral analysis of deep level transient spectroscopy

Authors
Ohbuchi, Y Yoshino, J Okamoto, Y Morimoto, J
Citation
Y. Ohbuchi et al., Evaluation of interface states in ZnO varistors by spectral analysis of deep level transient spectroscopy, JPN J A P 1, 38(2A), 1999, pp. 899-900
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
38
Issue
2A
Year of publication
1999
Pages
899 - 900
Database
ISI
SICI code
Abstract
Interface states in ZnO varistors were studied using spectral analysis of d eep level transient spectroscopy (SADLTS) to obtain the emission rate spect rum. We found one interface state in ZnO with the activation energy and the capture cross section distributed around their central values, E-0 = 0.98 eV and sigma(0) = 1.8 x 10(-16) cm(2), over widths Delta E = 0.19 eV and De lta sigma = 2.9 x 10(-17) cm(2), respectively.