An optical receiver configuration based on the concept of using a single op
tically gated metal-semiconductor-field-effect transistor (MESFET) to perfo
rm the function of a photodetector and preamplifier has been introduced. Th
e proposed optoelectronic integrated circuit (OEIC) receiver has been analy
zed theoretically. A simplified noise model of the receiver has also been d
eveloped, Results have been presented for an OEIC receiver based on InGaAs
MESFET supposed to be Fabricated with matured InGaAs/InP MMIC technology. T
heoretical results based on a simplistic noise model reveal that the propos
ed OEIC receiver has superior performance characteristics over the existing
optical receivers.