A THEORETICAL-STUDY OF THE ELECTRONIC-STRUCTURE OF CLEAN GAP(110) ANDSB ON GAP(110) SURFACES

Authors
WHITTLE R MCGOVERN IT HUGHES A SHEN TH MATTHAI CC
Citation
R. Whittle et al., A THEORETICAL-STUDY OF THE ELECTRONIC-STRUCTURE OF CLEAN GAP(110) ANDSB ON GAP(110) SURFACES, Journal of physics. Condensed matter, 5(36), 1993, pp. 6555-6562
Citations number
10
Categorie Soggetti
Physics, Condensed Matter
Journal title
Journal of physics. Condensed matter → ACNP
ISSN journal
09538984
Volume
5
Issue
36
Year of publication
1993
Pages
6555 - 6562
Database
ISI
SICI code
0953-8984(1993)5:36<6555:ATOTEO>2.0.ZU;2-M
Abstract
We have carried out a theoretical investigation of the surface electro nic structure of the relaxed GaP(110) surface and of a monolayer of Sb on GaP(110) by a self-consistent tight-binding method. These calculat ions, yielding band structure and local densities of states, show some marked differences from other calculations. In addition we have been able to determine the amount of charge transferred between the Sb over layer and the substrate.