The effect of jumps into distant sites on carrier energy relaxation in a disordered hopping system

Citation
Vi. Arkhipov et al., The effect of jumps into distant sites on carrier energy relaxation in a disordered hopping system, J PHYS-COND, 11(12), 1999, pp. 2531-2538
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS-CONDENSED MATTER
ISSN journal
09538984 → ACNP
Volume
11
Issue
12
Year of publication
1999
Pages
2531 - 2538
Database
ISI
SICI code
0953-8984(19990329)11:12<2531:TEOJID>2.0.ZU;2-P
Abstract
An analytic model of charge-carrier kinetics in a disordered hopping system accounting for the possibility of jumps to non-nearest hopping neighbours is formulated. The model is applied to the analysis of charge-carrier energ y relaxation at both low and finite temperatures. Carrier jumps to distant hopping neighbours are shown to increase the depth of the carrier energy di stribution at both low and finite temperatures, and to cause a shift of the effective transport level to deeper states at finite temperatures.