EXTENDED DEFECTS IN II-VI SEMICONDUCTOR HETEROEPITAXIAL LAYERS GROWN ON GAAS SUBSTRATES OF VARIOUS ORIENTATIONS

Authors
PATRIARCHE G CARLI AT RIVIERE JP TRIBOULET R MARFAING Y CASTAING J
Citation
G. Patriarche et al., EXTENDED DEFECTS IN II-VI SEMICONDUCTOR HETEROEPITAXIAL LAYERS GROWN ON GAAS SUBSTRATES OF VARIOUS ORIENTATIONS, Physica status solidi. a, Applied research, 138(2), 1993, pp. 437-443
Citations number
11
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. a, Applied research → ACNP
ISSN journal
00318965
Volume
138
Issue
2
Year of publication
1993
Pages
437 - 443
Database
ISI
SICI code
0031-8965(1993)138:2<437:EDIISH>2.0.ZU;2-B
Abstract
CdTe layers are made by OMCVD on GaAs. The substrates have (311), (211 ), and (511) orientations. Straightforward rules allow to explain the various kinds of growth that are observed. They are based on the conti nuity of atomic planes at small angles to the plane of the interface.