G. Patriarche et al., EXTENDED DEFECTS IN II-VI SEMICONDUCTOR HETEROEPITAXIAL LAYERS GROWN ON GAAS SUBSTRATES OF VARIOUS ORIENTATIONS, Physica status solidi. a, Applied research, 138(2), 1993, pp. 437-443
CdTe layers are made by OMCVD on GaAs. The substrates have (311), (211
), and (511) orientations. Straightforward rules allow to explain the
various kinds of growth that are observed. They are based on the conti
nuity of atomic planes at small angles to the plane of the interface.