Physical mechanisms in electron doped high T-c systems

Authors
Citation
T. Kasuya, Physical mechanisms in electron doped high T-c systems, J PHYS JPN, 68(3), 1999, pp. 930-934
Citations number
24
Categorie Soggetti
Physics
Journal title
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN
ISSN journal
00319015 → ACNP
Volume
68
Issue
3
Year of publication
1999
Pages
930 - 934
Database
ISI
SICI code
0031-9015(199903)68:3<930:PMIEDH>2.0.ZU;2-M
Abstract
Electronic states of electron doped high T-c material Nd2-xCexCuO4 have bee n investigated in detail based on the results of detailed band calculation performed in previous publications. It is proposed that a complicated multi -impurity state with one hole and two electrons is realized in the similar sense as in SmS and EuB6 studied before by us. This situation is most clear ly seen in the photoemission measurement, and various anomalies due to two carriers are well explained selfconsistently. In particular, the supercondu cting character is essentially the same as the overdoped region of La2-xSrx CuO4, where the pair wave function for the paired magnetic polaron is thoug ht to be predominantly s-character.