Thermal expansion and electrical resistivity of EuNi2(Si1-xGex)(2)

Citation
H. Wada et al., Thermal expansion and electrical resistivity of EuNi2(Si1-xGex)(2), J PHYS JPN, 68(3), 1999, pp. 950-953
Citations number
12
Categorie Soggetti
Physics
Journal title
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN
ISSN journal
00319015 → ACNP
Volume
68
Issue
3
Year of publication
1999
Pages
950 - 953
Database
ISI
SICI code
0031-9015(199903)68:3<950:TEAERO>2.0.ZU;2-9
Abstract
The thermal expansion and temperature dependence of electrical resistivity were measured for EuNi2 (Si1-xGex)(2), which shows a valence transition aga inst temperature in 0.5 less than or equal to x less than or equal to 0.82. A first-order phase transition was observed in the temperature dependence of the lattice parameters of x = 0.79 and 0.82, while the lattice parameter s vary continuously with temperature for x less than or equal to 0.70. The temperature dependence of electrical resistivity shows a peak at the valenc e transition temperature. The origin of the peak is discussed on the basis of the dynamic alloy model.