STUDY ON INTERFACE PROPERTIES OF GAAS AO/AL STRUCTURES USING THE THERMALLY STIMULATED CURRENT (TSC) METHOD/

Authors
OZTURK ZZ EBEOGLU MA
Citation
Zz. Ozturk et Ma. Ebeoglu, STUDY ON INTERFACE PROPERTIES OF GAAS AO/AL STRUCTURES USING THE THERMALLY STIMULATED CURRENT (TSC) METHOD/, Physica status solidi. a, Applied research, 138(2), 1993, pp. 631-638
Citations number
17
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. a, Applied research → ACNP
ISSN journal
00318965
Volume
138
Issue
2
Year of publication
1993
Pages
631 - 638
Database
ISI
SICI code
0031-8965(1993)138:2<631:SOIPOG>2.0.ZU;2-S
Abstract
Interface properties of GaAs/anodic oxide (AO)/Al structures with vari ous anodic oxide films which are grown by using different electrolytes under constant current conditions are studied. The C-U, I-U, and ther mally stimulated current measurements for these devices are carried ou t at various temperatures. Trap energy levels which are determined fro m TSC measurements indicate that there are As(Ga) antisite and probabl y As interstitial-type defects at the interface depending on the prepa ration techniques.