CATHODOLUMINESCENCE EVIDENCE OF THE RELATIVE POSITION OF AS(G) AND GA(G) DISLOCATION-RELATED ENERGY-BANDS IN GALLIUM-ARSENIDE

Authors
SIEBER B FARVACQUE JL MIRI A
Citation
B. Sieber et al., CATHODOLUMINESCENCE EVIDENCE OF THE RELATIVE POSITION OF AS(G) AND GA(G) DISLOCATION-RELATED ENERGY-BANDS IN GALLIUM-ARSENIDE, Physica status solidi. a, Applied research, 138(2), 1993, pp. 673-680
Citations number
32
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. a, Applied research → ACNP
ISSN journal
00318965
Volume
138
Issue
2
Year of publication
1993
Pages
673 - 680
Database
ISI
SICI code
0031-8965(1993)138:2<673:CEOTRP>2.0.ZU;2-C
Abstract
Cathodoluminescence contrast experiments are performed in the range 87 to 350 K on As(g) and Ga(g) dislocations introduced by means of micro hardness indentations in p-type bulk gallium arsenide. The experimenta l results are interpreted by a model which assumes the recombination p roperties of the dislocation to be the results of the dislocation radi al electrical field. It is found, in agreement with previous EBIC cont rast studies of dislocations in n-type GaAs, that the energy band rela ted to the As(g) dislocation is closer to the top of the valence band than that related to the Ga(g) dislocation.