OPTICAL-PROPERTIES OF DISLOCATIONS IN SILICON-CRYSTALS

New dislocation-related photoluminescence (PL) data associated with va rious types of extended defects in Si are considered. It is found that the D6 line in n-Si epitaxial layers is actually a doublet consisting of two lines separated by 2 meV. The D2 line strongly correlates with the presence of Frank dislocation loops in the crystals. The luminesc ence lines Dl, D2 and the band associated with rod-like defects are qu enched by a magnetic field, the lines D4, D3 are not. The magneto-quen ching effect is interpreted in terms of the kinetics of carrier captur e by extended defects.