New dislocation-related photoluminescence (PL) data associated with va
rious types of extended defects in Si are considered. It is found that
the D6 line in n-Si epitaxial layers is actually a doublet consisting
of two lines separated by 2 meV. The D2 line strongly correlates with
the presence of Frank dislocation loops in the crystals. The luminesc
ence lines Dl, D2 and the band associated with rod-like defects are qu
enched by a magnetic field, the lines D4, D3 are not. The magneto-quen
ching effect is interpreted in terms of the kinetics of carrier captur
e by extended defects.